PART |
Description |
Maker |
IMN10 |
Switching Diode Ultra high speed switching High reliability.
|
Rohm
|
1SS190 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
1SS352 |
ULTRA HIGH SPEED SWITCHING APPLICATION DIODE
|
Guangdong Kexin Industrial Co.,Ltd
|
1SS360F EA08953 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
KDS121 |
SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)
|
KEC Holdings KEC(Korea Electronics)
|
HN2D02FU E001993 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
CFD4448 |
SURFACE MOUNT ULTRA HIGH SPEED SILICON SWITCHING DIODE
|
Central Semiconductor Corp
|
KDS122 |
SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
KDS201 |
SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC(Korea Electronics)
|
XP151A11B0MR |
Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 4.5V
|
TY Semiconductor Co., Ltd
|